We show that any aromatic hydrocarbon ring has twolead configurations for which current at small voltages is suppressed by destructive interference. Quantum interference in a onedimensional silicon nanowire. The channel length of the device is smaller than the inelastic coherence length of the electrons in the quantum well wire channel, otherwise scattering will randomize electron. The quantum interference effect transistor university of. Molecular transistors operating in the quantum tunneling regime represent potential electronic building blocks for future integrated. Artists conception of a quantum interference effect transistor based on 1,3benzenedithiol.
A onedimensional quantum interference transistor 1d quit structure consisting of two. In the off state of the device, destructive interference blocks the. Quantum interference e ects in molecular electronics. Designing principles of molecular quantum interference. Proposition and analysis of three level interference. Mazumdar department of physics, university of arizona, 1118 e. We propose a new type of molecular transistor, the quantum interference effect transistor quiet, based on tunable current suppression due to quantum interference. The quantum interference effect transistor nasaads. Both the magnitude and the sign of the transmitted charge are extremely sensitive to the configuration of the transistor and to the magnetic field. Interferencebased molecular transistors scientific reports nature. The quantum interference effect transistor iopscience. Quantum interference mediated vertical molecular tunneling.
Quantum transport datta pdf quantum transport in elementary terms accessible to a beginner. We study molecular transistors where graphene nanoribbons act as three metallic electrodes connected to a ringshaped 18annulene molecule. This paper presents the realization of a superconducting quantum interference device that uses the superconducting proximity effect to achieve higher sensitivity. Quantum interference controlled threeterminal molecular transistors based on a single ringshaped molecule connected to graphene nanoribbon electrodes kamal k. Using a device called a josephson junction, a squid can detect a change of energy as much as 100 billion times weaker than the electromagnetic energy that moves a. Quantum tunneling is a limitation in todays transistors, but it could be the key to future devices illustration. The colored spheres represent individual carbon green, hydrogen purple, sulfur yellow, and gold gold atoms. We demonstrate finally that our proposed device operates as a quantum interference transistor with high onoff ratio. Quantum interference inverters based on \\mathscrp\mathscrt\symmetric interference transistors.
Interference single electron transistors based on quantum dot. Quantum interference in singlemolecule superconducting fieldeffect transistors. As a first example of interference set based on quantum dot molecules we consider a benzene single molecule transistor. A high performance quantum interference transistor quit realized using high mobility 1d modfet channels is presented. Interference single electron transistors based on quantum. Howard austerlitz, in data acquisition techniques using pcs second edition, 2003. Nonhysteretic superconducting quantum interference proximity transistor with enhanced responsivity appl. Designing principles of molecular quantum interference effect. The transistors were measured in a chamber in which the a.
Sep, 2007 we give a detailed discussion of the quantum interference effect transistor quiet, a proposed device which exploits the interference between electron paths through aromatic molecules to modulate the current flow. They comprise single molecule quantum dots as well as arti. The development of superconducting quantum interference devices based on the josephson effect has led to significant improvements in our ability to measure magnetic fields. In the off state, perfect destructive interference stemming from the molecular symmetry blocks the current, while in the on.
Quantum interference in fully depleted trigate quantum wire transistors 601 fig. Molecular transistors based on quantum interference. Quantum behavior of graphene transistors near the scaling limit. To explore the designing principles for the quantum interference effect transistors, a series of simulations are carried out on a 2,5linked perylene molecular junction composed of two subsystems connected via destructive quantum interference. Can molecular quantum interference effect transistors survive. Charles a stafford, david m cardamone, sumit mazumdar created date. In the off state, perfect destructive interference stemming from the molecular symmetry blocks current, while in the. Can molecular quantum interference effect transistors. Nonhysteretic superconducting quantum interference. The most promising approach to overcome this dilemma is to exploit the quantum mechanical, wave nature of the electron. However, controlling qi using external stimuli is challenging. An example is the e ect of donoracceptor groups in electrophilic aromatic substitution. An optical transistor, also known as an optical switch or a light valve, is a device that switches or amplifies optical signals. T he idea of utilizing quantum interference qi to control the conductance of molecular electronic devices has been explored since 1988,1 both theoretically and experimentally.
In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Superconducting quantum interference proximity transistor. Quantum interference effects in molecular electronics. Phonon exacerbated quantum interference effects in iiiv nanowire transistors m. We give a detailed discussion of the quantum interference effect transistor quiet, a proposed device which exploits interference. Phonon exacerbated quantum interference effects in iiiv. Analysis of the device performance of quantum interference. Quantum interference in silicon onedimensional junctionless. Using local stresslimited oxidation kedzierski and bokor succeeded in fabricating quantum wire transistors with channel diameter of only 5 nm operating at room temperature. High operating temperature in vbased superconducting quantum. Quantuminterferencecontrolled threeterminal molecular. This new type of transistor is smaller than most proposed molecular transistors, yet possesses the important characteristics of traditional macroscopic devices. Quantum interference effect transistor quiet arizona. Pdf quantum interference mediated vertical molecular.
Quantum interference qi can lead to large variations in single molecule conductance. Observation of quantum effects and coulomb blockade in. Using quantum mechanics to turn molecules into transistors. Mol 1university of oxford, department of materials, 16 parks road, oxford ox1 3ph, uk 2university of glasgow, school of engineering, rankine building, oak eld avenue, glasgow, g12 8lt, united kingdom. Pdf quantuminterferencecontrolled threeterminal molecular. We use two simulation methods to investigate the effects of nuclear vibration on quantum interference in a. Closeup of the vortex formed in the source of a trigate quantum wire mosfet device with v 0. The proposed device has a broad, steplike iv characteristic and amplifies current in a controllable way. A superconducting quantum interference device squid is a mechanism used to measure extremely weak signals, such as subtle changes in the human bodys electromagnetic energy field. We propose a new class of molecular transistor based on quantum interference. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly resolved fabry. Feb 14, 2019 a vertical tunneling organic transistor on graphene roomtemperature intramolecular quantum interference in selfassembled monolayers field effect tuning of the energy levels of a selfassembled monolayer on graphene quantum interference optimizes the onoff ratio of ultrathinfilm transistors. Sep 24, 2008 quantum interference i n transistors abstract.
We consider adiabatic charge transport through transistor based on quantum dot caused by two periodically changing external perturbations. However, due to their complex fabrication processes and poor stability, traditional molecular transistors can only operate stably at cryogenic temperatures. Mol 1university of oxford, department of materials, 16 parks road, oxford ox1 3ph, uk 2university of glasgow, school of engineering, rankine building. Simulation results suggest that the overall conductance of a large. Animation of the timedependent local currents of the naphthalene. Quantum interference in singlemolecule superconducting field. Quantum interference mediated vertical molecular tunneling transistors mengning ding, xiang xu, chen wang, sungjoon lee, yu huang, ryan c.
Here, through a combined experimental and theoretical investigation, we demonstrate a new design. However, the power of combining quantum parallelism and interference can be clearly seen in the deutschjozsa algorithm that solves the following. A quantum fieldeffect transistor qfet or quantumwell fieldeffect transistor qwfet is a type of mosfet that takes advantage of quantum tunneling to. Us7786472b2 quantum interference effect transistor quiet. We give a detailed discussion of the quantum interference effect transistor quiet, a proposed device which exploits interference between electron paths through aromatic molecules to modulate current flow. The operation of this 1d quit is based on electrostatic aharonovbohm quantum interference effect. Such embodiments of the quantum interference effect transistor are devices which convert molecular or electronic changes in the sidegroup into electrical signals. For realistic parameters the change in gate potential.
What is superconducting quantum interference device. May 11, 2018 to explore the designing principles for the quantum interference effect transistors, a series of simulations are carried out on a 2,5linked perylene molecular junction composed of two subsystems connected via destructive quantum interference. Apr 05, 2017 here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors squipts based on the implementation of vanadium v in the superconducting loop. We give a detailed discussion of the quantum interference effect transistor quiet, a proposed device which exploits the interference. A transistor can be created by providing phase relaxation or decoherence at a. Allelectricspin control in interference single electron transistors andrea donarini, georg begemann, and milena grifoni theoretische physik, universit. Quantum interference in crossconjugated molecules can be utilized to construct molecular quantum interference e. Pdf allelectric spin control in interference single. A squid is a thinfilm device operating at liquid helium temperature. N2 we give a detailed discussion of the quantum interference effect transistor quiet, a proposed device which exploits the interference between electron paths through aromatic molecules to modulate the current flow. Quantum interference an overview sciencedirect topics. Disclosed is hererin a quantum phase interference transistor comprising. Interference single electron transistors based on quantum dot molecules andrea donarini and milena grifoni abstract we consider nanojunctions in the single electron tunneling regime which, due to a high degree of spatial symmetry, have a degenerate manybody spectrum.
Light occurring on an optical transistor s input changes the intensity of light emitted from the transistor s output while output power is supplied by an additional optical source. Quantum interference in crossconjugated molecules can be utilized to construct molecular quantum interference effect transistors. Details of the model and the calculation procedure pdf. Box 210081, tucson, az 85721 we propose a new type of molecular transistor, the quantum interference e. However, whether its application can be achieved depends on the survivability of the quantum interference under real conditions such as nuclear vibration. The coloured spheres represent individual carbon green, hydrogen purple, sulfur yellow, and gold gold atoms. Selfassembled molecularelectronic films controlled by room. Only vibrational modes that simultaneously alter the carboncarbon bond lengths and break the 6fold symmetry within the benzene component can cause decoherence in the benzene ring. Quantum interference in transistors ieee conference. Quantum interference in silicon 1d junctionless nanowire. Quantum behavior of graphene transistors near the scaling. At low temperature, the devices show high fluxtovoltage up to 0. Consider a quantum analogue of cmos inverter consisting of two quantum switches.
Interferencebased molecular transistors scientific reports. Selfassembled molecularelectronic films controlled by. Charles a stafford1, david m cardamone2 and sumit mazumdar1. The quantum interference effect transistor is also insensitive to molecular vibrations. Quantum interference in transistors ieee conference publication. We present a theoretical study of a recently proposed class of quantum interference transistors that utilize quantum interference effects in ultrasmall.
Towards graphenebased quantum interference devices core. Quantum interference mediated vertical molecular tunneling transistors chuancheng jia 1, marjan famili 2, marco carlotti 3, yuan liu 4,5, peiqi wang 1,4, iain m. Nanomaterials free fulltext switching quantum interference in. The two pn junctions in each transistor provide electronic barriers to the flow of charges, and the transistor can be switched on by applying a voltage to the gate on top of the channel. The quantum interference effect transistor request pdf. Pdf interference single electron transistors based on. Quantum interference in silicon 1d junctionless nanowire fielde ect transistors f.
Squid stands for superconducting quantum interference device, a superconducting transducer based on the josephson junction. The quantum interference effect transistor citeseerx. Molecular transistors operating in the quantum tunneling regime represent potential electronic building blocks for future integrated circuits. Such modes are only excited at temperatures greater than about 500 k. Supriyo datta is the thomas duncan distinguished professor in the school. Bernholc4 1department of physics and astronomy, university of delaware, newark, delaware 197162570, usa. Nonhysteretic superconducting quantum interference proximity. A design of a transistor at the single molecule level has been proposed recently. Superconducting quantum interference proximity transistor nature. Quantum interference results in a subthreshold slope that is independent of temperature.
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